Piezoelectric wafers for SAW applications
Current technologies are developing in leaps and bounds, miniaturization of complex technical products doesn't stop even for a moment. At the end of the 20th century the mobile phone wasthe size of abackpack, that was due to bulkycomponents of signal detection andtransmission. However, thanks to the development of technologies for the production of surface acoustic wave acousto-electric devices, we can keep almost a full-fledged PC in our pockets. Fomos-Materialsoffers piezoelectric wafers made of Langasite, Lithium Tantalate, Lithium Niobate and Catangasite crystals to manufacturers of SAWdevices. Wafers as with standard cuts as under the agreed specification are presented to your attention.
Material
Lithium Niobate (LiNbO3)
| № | Characteristic | Value | Measurement units |
|---|---|---|---|
| 1. | Symmetry class | 3m | - |
| 2. | Cell parameters | a = 5,150x10-10; c = 13,816x10-10 | m |
| 3. | Curie temperature | 1145 | оС |
| 4. | Density | 4,73 | g/cm3 |
Lanthanum Gallium Silicate (La3Ga5SiO14)
| № | Characteristic | Value | Measurement units |
|---|---|---|---|
| 1. | Symmetry class | 32 | - |
| 2. | Cell parameters | a = 8,170x10-10; c = 5,098x10-10 | m |
| 3. | Curie temperature | N/A | оС |
| 4. | Density | 5,74 | g/cm3 |
Calcium Tantalum Gallium Silicate(Ca3TaGa3Si2O14)
| № | Characteristic | Value | Measurement units |
|---|---|---|---|
| 1. | Symmetry class | 32 | - |
| 2. | Cell parameters | a = 8,093x10-10; c = 4,976x10-10 | m |
| 3. | Curie temperature | N/A | оС |
| 4. | Density | 4,62 | g/cm3 |
Orientation
Fomos Materials can manufacture SAW wafer with the required parameters according to your specification.
Result of selected parameters
Properties of SAW wafer made of LN with Y-Z Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | Y-Z | ±0,3 | ° |
| 2. | Reference flat angle | Z0° | ±0,5 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of LN with 64°Y-X Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 64°Y-X | ±0,3 | ° |
| 2. | Reference flat angle | X0° | ±0,5 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of LN with 41°Y-X Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 41°Y-X | ±0,3 | ° |
| 2. | Reference flat angle | X0° | ±0,5 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of LN with 128°Y-X Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 128°Y-X | ±0,3 | ° |
| 2. | Reference flat angle | X0° | ±0,5 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of LGS with (0;138,5;26,7) Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 138,5° | ±0,17 | ° |
| 2. | Reference flat angle | 26,7° | ±0,25 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of LGS with (0;90;0) Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 90° | ±0,17 | ° |
| 2. | Reference flat angle | 0° | ±0,25 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of LGS with (0;22;90) Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 22° | ±0,17 | ° |
| 2. | Reference flat angle | 90° | ±0,25 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of CTGS with (0;90;40) Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 90° | ±0,3 | ° |
| 2. | Reference flat angle | 40° | ±0,5 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |
Application
Properties of SAW wafer made of CTGS with (0;90;0) Orientation
Geometry
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Wafer cut angle | 90° | ±0,17 | ° |
| 2. | Reference flat angle | 0° | ±0,25 | ° |
| 3. | Diameter, D | 76,2 | ±0,25 | mm |
| 100 | ±0,5 | mm | ||
| 4. | Thickness, t | от 0,35 | ±0,03 | mm |
| 5. | Reference flat, b | 22,0 | ±3,0 | mm |
| 32,5 | ±3,0 | mm | ||
| 6. | Secondary flat, a | 11,2 | ±4,0 | mm |
| 18,0 | ±4,0 | mm |
Surface processing
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Front Surface Finish | Polished | Ra≤0,0001 | μm |
| 2. | Back Surface Finish | Lapped | Ra≤0,5 | μm |
| 3. | Total Thickness Variation (TTV) | < 15 | - | μm |
Surface defects
| № | Characteristic | Value | Tolerance | Measurement units |
|---|---|---|---|---|
| 1. | Working area of the wafer | 3 mm smaller than the diameter of the wafer | - | - |
| 2. | Scratches, cracks, contamination, unpolished areas | Not allowed on the working area by visual inspection | - | - |
| 3. | Chips inside the working area on both sides and on the reference flat | Not allowed | - | - |
| 4. | Chips outside the working area of the wafer | Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed. | - | - |
| 5. | Edging | Rounded edges | - | - |