Piezoelectric wafers for SAW applications

Current technologies are developing in leaps and bounds, miniaturization of complex technical products doesn't stop even for a moment. At the end of the 20th century the mobile phone wasthe size of abackpack, that was due to bulkycomponents of signal detection andtransmission. However, thanks to the development of technologies for the production of surface acoustic wave acousto-electric devices, we can keep almost a full-fledged PC in our pockets. Fomos-Materialsoffers piezoelectric wafers made of Langasite, Lithium Tantalate, Lithium Niobate and Catangasite crystals to manufacturers of SAWdevices. Wafers as with standard cuts as under the agreed specification are presented to your attention.

Material

LGS

CTGS

Lithium Niobate (LiNbO₃)

№	Characteristic	Value	Measurement units
1.	Symmetry class	3m	-
2.	Cell parameters	a = 5,150x10^-10; c = 13,816x10^-10	m
3.	Curie temperature	1145	^оС
4.	Density	4,73	g/cm³

Lanthanum Gallium Silicate (La₃Ga₅SiO₁₄)

№	Characteristic	Value	Measurement units
1.	Symmetry class	32	-
2.	Cell parameters	a = 8,170x10^-10; c = 5,098x10^-10	m
3.	Curie temperature	N/A	^оС
4.	Density	5,74	g/cm³

Lithium Tantalate (LiTaO₃)

№	Characteristic	Value	Measurement units
1.	Symmetry class	3m	-
2.	Cell parameters	a = 5,154x10^-10; c = 13,781x10^-10	m
3.	Curie temperature	607	^оС
4.	Density	7,46	g/cm³

Calcium Tantalum Gallium Silicate(Ca₃TaGa₃Si₂O₁₄)

№	Characteristic	Value	Measurement units
1.	Symmetry class	32	-
2.	Cell parameters	a = 8,093x10^-10; c = 4,976x10^-10	m
3.	Curie temperature	N/A	^оС
4.	Density	4,62	g/cm³

Orientation

Y-Z

64°Y-X

41°Y-X

128°Y-X

(0;138,5;26,7)

(0;90;0)

(0;22;90)

42°Y-Х

X-112° Y

(0;90;40)

(0;90;0)

Other

Fomos Materials can manufacture SAW wafer with the required parameters according to your specification.

Result of selected parameters

Properties of SAW wafer made of LN with Y-Z Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	Y-Z	±0,3	°
2.	Reference flat angle	Z0°	±0,5	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LN with 64°Y-X Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	64°Y-X	±0,3	°
2.	Reference flat angle	X0°	±0,5	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LN with 41°Y-X Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	41°Y-X	±0,3	°
2.	Reference flat angle	X0°	±0,5	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LN with 128°Y-X Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	128°Y-X	±0,3	°
2.	Reference flat angle	X0°	±0,5	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LGS with (0;138,5;26,7) Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	138,5°	±0,17	°
2.	Reference flat angle	26,7°	±0,25	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LGS with (0;90;0) Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	90°	±0,17	°
2.	Reference flat angle	0°	±0,25	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LGS with (0;22;90) Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	22°	±0,17	°
2.	Reference flat angle	90°	±0,25	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LT with 42°Y-Х Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	42°Y-X	±0,3	°
2.	Reference flat angle	X0°	±0,5	°
3.	Diameter, D	50,8	±0,1	mm
		63,5	±0,25	mm
		76,2	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	18,0	±2,0	mm
		18,0	±3,0	mm
		22,0	±3,0	mm
6.	Secondary flat, a	8,0	±1,0	mm
		10,0	±2,0	mm
		11,2	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of LT with X-112° Y Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	Х-112°Y	±0,3	°
2.	Reference flat angle	+112°Y	±0,5	°
3.	Diameter, D	50,8	±0,1	mm
		63,5	±0,25	mm
		76,2	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	18,0	±2,0	mm
		18,0	±3,0	mm
		22,0	±3,0	mm
6.	Secondary flat, a	8,0	±1,0	mm
		10,0	±2,0	mm
		11,2	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of CTGS with (0;90;40) Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	90°	±0,3	°
2.	Reference flat angle	40°	±0,5	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

Properties of SAW wafer made of CTGS with (0;90;0) Orientation

Geometry

№	Characteristic	Value	Tolerance	Measurement units
1.	Wafer cut angle	90°	±0,17	°
2.	Reference flat angle	0°	±0,25	°
3.	Diameter, D	76,2	±0,25	mm
3.	Diameter, D	100	±0,5	mm
4.	Thickness, t	от 0,35	±0,03	mm
5.	Reference flat, b	22,0	±3,0	mm
5.	Reference flat, b	32,5	±3,0	mm
6.	Secondary flat, a	11,2	±4,0	mm
6.	Secondary flat, a	18,0	±4,0	mm

Surface processing

№	Characteristic	Value	Tolerance	Measurement units
1.	Front Surface Finish	Polished	Ra≤0,0001	μm
2.	Back Surface Finish	Lapped	Ra≤0,5	μm
3.	Total Thickness Variation (TTV)	< 15	-	μm

Surface defects

№	Characteristic	Value	Tolerance	Measurement units
1.	Working area of the wafer	3 mm smaller than the diameter of the wafer	-	-
2.	Scratches, cracks, contamination, unpolished areas	Not allowed on the working area by visual inspection	-	-
3.	Chips inside the working area on both sides and on the reference flat	Not allowed	-	-
4.	Chips outside the working area of the wafer	Chips with the length no more than 1,0 mm and the width no more than 0,5 mm are allowed.	-	-
5.	Edging	Rounded edges	-	-

Application

Acousto-electronics

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SAW wafer

Piezoelectric wafers for SAW applications

Lithium Niobate (LiNbO3)

Lanthanum Gallium Silicate (La3Ga5SiO14)​

Lithium Tantalate (LiTaO3)

Calcium Tantalum Gallium Silicate(Ca3TaGa3Si2O14)

Properties of SAW wafer made of LN with Y-Z Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LN with 64°Y-X Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LN with 41°Y-X Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LN with 128°Y-X Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LGS with (0;138,5;26,7) Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LGS with (0;90;0) Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LGS with (0;22;90) Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LT with 42°Y-Х Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of LT with X-112° Y Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of CTGS with (0;90;40) Orientation

Geometry

Surface processing

Surface defects

Application

Properties of SAW wafer made of CTGS with (0;90;0) Orientation

Geometry

Surface processing

Surface defects

Application

Lithium Niobate (LiNbO₃)

Lanthanum Gallium Silicate (La₃Ga₅SiO₁₄)

Lithium Tantalate (LiTaO₃)

Calcium Tantalum Gallium Silicate(Ca₃TaGa₃Si₂O₁₄)